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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2022

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022

2000, vol.100, no.1 2000, vol.100, no.147 2000, vol.100, no.148 2000, vol.100, no.149 2000, vol.100, no.2 2000, vol.100, no.235
2000, vol.100, no.236 2000, vol.100, no.265 2000, vol.100, no.266 2000, vol.100, no.305 2000, vol.100, no.306 2000, vol.100, no.318
2000, vol.100, no.370 2000, vol.100, no.405 2000, vol.100, no.406 2000, vol.100, no.505 2000, vol.100, no.506 2000, vol.100, no.547
2000, vol.100, no.548 2000, vol.100, no.549 2000, vol.100, no.57 2000, vol.100, no.58 2000, vol.100, no.641 2000, vol.100, no.642
2000, vol.100, no.683

题名作者出版年年卷期
Fabrication of c-Si/SiO{sub}2 low dimensional structure using selective epitaxial growth by gas source molecular beam epitaxyToru Segawa; Satoru Matsumoto20002000, vol.100, no.641
Fabrication and characterization of periodic multiatomic step structures on patterned vicinal substrates and its applicationsYasuhiro Oda; Toshifumi Harada; Junichi Motohisa; Takashi Fukui20002000, vol.100, no.641
Fabrication of InGaAs ridge quantum structures grown by selective MBE and their device applicationsT. Muranaka; A. Ito; C. Jiang; H. Hasegawa20002000, vol.100, no.641
Fabrication of GaN dots array on Si substrate by selective area growth methodMasahito Yamaguchi; Yoshio Honda; Nobuhiko Sawaki20002000, vol.100, no.641
Selective formation of site-controlled metal nanostructures on epitaxial fluoride filmsSatoshi Yamada; Fumihito Hirabayashi; Kazuo Tsutsui20002000, vol.100, no.641
The diffusion of impurities into multi-walled carbon nanotubes and spin flipping: polarized injection of spin flip electronI. Takesue; T. Hasegawa; J. Haruyama20002000, vol.100, no.641
Characterization of ultrathin insulator/Si interfaces formed on n-Si(001) by UHV contactless capacitance-voltage methodRyouhei Shouji; Tamotsu Hashizume; Toshiyuki Yoshida; Masamichi Akazawa; Hideki Hasegawa20002000, vol.100, no.641
Concentration of electric field in Si nano structures and its effect on tunneling currentYasuhiko Ishikawa; Michiharu Tabe; Kazuaki Sawada; Makoto Ishida20002000, vol.100, no.641
STM observation of surface electron wave on InAs/GaAs (111)A heterostructuresHiroshi Yamaguchim; Kiyoshi Kanosawa; Yoshiro Hirayama20002000, vol.100, no.641
Study on quantum-size effects and alloying effects of InAs- and InGaAs-quantum dots on GaAs(001) using scanning tunneling spectroscopyT. Yamauchi; Y. Ohyama; Y. Matsuba; M. Tabuchi; A. Nakamura20002000, vol.100, no.641
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