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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2022

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


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2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022

2000, vol.100, no.1 2000, vol.100, no.147 2000, vol.100, no.148 2000, vol.100, no.149 2000, vol.100, no.2 2000, vol.100, no.235
2000, vol.100, no.236 2000, vol.100, no.265 2000, vol.100, no.266 2000, vol.100, no.305 2000, vol.100, no.306 2000, vol.100, no.318
2000, vol.100, no.370 2000, vol.100, no.405 2000, vol.100, no.406 2000, vol.100, no.505 2000, vol.100, no.506 2000, vol.100, no.547
2000, vol.100, no.548 2000, vol.100, no.549 2000, vol.100, no.57 2000, vol.100, no.58 2000, vol.100, no.641 2000, vol.100, no.642
2000, vol.100, no.683

题名作者出版年年卷期
Interface properties of MOCVD grown GaAs/InGaP heterostructuresH. Tanaka; T. Kikkawa; T. Nishioka; H. Ochimizu; K. Imanishi20002000, vol.100, no.235
Magnetically-excited plasma nitridation of Al/GaAs was performance to achieve the plasma-damage-less GaN passivation of GaAsTomoaki Tojyo; Hideaki Ikoma20002000, vol.100, no.235
The recovery process of RIE damage in InGaAs/As/AlGaAs PHEMT using recombination enhanced defect rationS. Hoshi; T. Izumi; T. Ohshima; M. Tsunotani; T. Kimura20002000, vol.100, no.235
Memory capability of Ni/p-GaN Schottky contactsKenji Shiojima; Shiro Sakai20002000, vol.100, no.235
Electrical characterization of metal/GaN Schottky interfaces - influence of inhomogeneous Schottky barrier heightYuji Ito; Takayuki Sawada; Kazuaki Imai; Naohito Kimura; Siro Sakai20002000, vol.100, no.235
Current-voltage characteristics of Schottky and MIS diodes with nm-thin insulating layersYousuke Oota; Yuuki Kasai; Syoushin Hashimoto; Kouichi Iiyama; Saburo Takamiya20002000, vol.100, no.235
Characterization and control of surface and interfaces for GaN-based materialsT. Hashizume; S. Ootomo; S. Oyama; R. Nakasaki; H. Hasegawa20002000, vol.100, no.235
Electronic status of GaAs(100) surface with adsorbed chalcogen atomsYuuki Kasai; Youichi Yamamura; Takao Inokuma; Kouichi Iiyama; Saburo Takamiya20002000, vol.100, no.235



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