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期刊


ISSN0734-2101
刊名Journal of Vacuum Science & Technology
参考译名真空科学与技术，A辑：真空、表面与膜
收藏年代2000～2013



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013

2001, vol.19, no.1 2001, vol.19, no.2 2001, vol.19, no.3 2001, vol.19, no.4, P. I 2001, vol.19, no.4, P. II 2001, vol.19, no.5
2001, vol.19, no.6

题名作者出版年年卷期
Surface science with nanosized particles in a carrier gasA. Keller; M. Fierz; K. Siegmann; H. C. siegmann; A. Filippov20012001, vol.19, no.1
Nitridation of thermal SiO{sub}2 films by radio-frequency plasma assisted electron cyclotron resonance: effect of plasma modes and process parametersA. Raveh; J. Brewer; E. A. Irene20012001, vol.19, no.1
Nitridation of thermal SiO{sub}2 films by radio-frequency plasma assisted electron cyclotron resonance: layer structure and compositionA. Raveh; J. Brewer; E. A. Irene20012001, vol.19, no.1
Surface teching mechanism of silicon nitride in fluorine and nitric oxide containing plasmasB. E. E. Kastenmeier; P. J. Matsuo; G. S. Oehrlein; R. E. Ellefson; L. C. Frees20012001, vol.19, no.1
In situ characterization of residues formed on a plasma-etching chamberHirkoi Kawada; Miyuki Yamane; Hiroyuki Kitsunai; Shinichi Suzuki20012001, vol.19, no.1
Remote-plasma-enhanced reaction between a silicon surface and trifluoro-acetyl-fluoride gasYoji Saito; Hirofumi Yamazaki; Isamu Mouri20012001, vol.19, no.1
Electrical conduction studies of plasma enhanced chenical vapor deposited silicon nitride filmsMohua Bose; D. K. Basa; D. N. Bose20012001, vol.19, no.1
Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing dischargesJ. R. Woodworth; M. E. Riley; V. A. Amatucci; T. W. Hamilton; B. P. Aragon20012001, vol.19, no.1
Effects of ozone assisted deposition on the dielectric properties of 90°off-axis radio frequency magnetron sputtered SrTiO{sub}3B. J. Gibbons; Y. Fan; A. T. Findikoglu; Q. X. Jia; D. W. Reagor20012001, vol.19, no.1
Thin film growth of reactive sputter deposited tungsten-carbon thin filmsPhilip D. Rack; Jeffrey J. Peterson; Jie Li; A. C. Geiculescu; H. J. Rack20012001, vol.19, no.1
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