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期刊


ISSN0734-2101
刊名Journal of Vacuum Science & Technology
参考译名真空科学与技术，A辑：真空、表面与膜
收藏年代2000～2013



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013

2001, vol.19, no.1 2001, vol.19, no.2 2001, vol.19, no.3 2001, vol.19, no.4, P. I 2001, vol.19, no.4, P. II 2001, vol.19, no.5
2001, vol.19, no.6

题名作者出版年年卷期
Profile evolution during polysilicon gate etching with low-pressure high-density Cl{sub}2/HBr/O{sub}2 plasma chemistriesMutumi Tuda; Kenji Shintani; Hiroki Ootera20012001, vol.19, no.3
Measurements of neutral and ion composition, neutral temperature, and electron energy distribution function in a CF{sub}4 inductively coupled plasmaHarmeet Singh; J. W. Coburn; David B. Graves20012001, vol.19, no.3
Angular dependence of the redeposition rates during SiO{sub}2 etching in a CF{sub}4 plasmaByeong-Ok Cho; Sung-Wook Hwang; Gyeo-Re Lee; Sang Heup Moon20012001, vol.19, no.3
Influence of substrate bias on the structure and properties of (Ti,Al)N films deposited by filtered cathodic vacuum arcY. H. Cheng; B. K. Tay; S. P. Lau; X. Shi20012001, vol.19, no.3
Study of the early stage of SiO{sub}2 growth by a TEOS-O{sub}2 plasma mixture using a three-dimensional Monte Carlo modelA. Rhallabi; G. Turban20012001, vol.19, no.3
Real-time feedback control of electron density in inductively coupled plasmasCheng-Hung Chang; Keh-Chyang Leou; Chaung Lin20012001, vol.19, no.3
Spectral plasma temperature determination of thermionic vacuum arc in the titanium vaporsCostel Biloiu; Horst Ehrich; Geavit Musa20012001, vol.19, no.3
Damage in III/V semiconductors caused by hard- and soft-etching plasmasGerhard Franz20012001, vol.19, no.3
Deposition of trimethylsilane in glow dischargesH. K. Yasuda; Q. S. Yu20012001, vol.19, no.3
Synthesis of fluorinated diamond-like carbon films by the plasma immersion ion processing techniqueM. Hakovirta; D. H. Lee; X. M. He; M. Nastasi20012001, vol.19, no.3
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