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期刊


ISSN0734-2101
刊名Journal of Vacuum Science & Technology
参考译名真空科学与技术，A辑：真空、表面与膜
收藏年代2000～2013



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013

2001, vol.19, no.1 2001, vol.19, no.2 2001, vol.19, no.3 2001, vol.19, no.4, P. I 2001, vol.19, no.4, P. II 2001, vol.19, no.5
2001, vol.19, no.6

题名作者出版年年卷期
Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: a classification scheme based on bond ionicityGerald Lucovsky20012001, vol.19, no.4, P. II
Tungsten silicide for the alternate gate in metal-oxide-semiconductor devicesK. Roh; S. Youn; S. Yang; Y. Roh20012001, vol.19, no.4, P. II
Influence of annealing temperature on simultaneous vapor deposited calcium phosphate thin filmsM. Hamdi; A. M. Ektessabi20012001, vol.19, no.4, P. II
Deposition of electric quality amorphous silicon, a-Si:H, thin films by a hollow cathode plasma-jet reactive sputtering systemG. Pribil; Z. Hubicka; R. J. Soukup; N. J. Ianno20012001, vol.19, no.4, P. II
Supermagnetron plasma chemical vapor deposition and qualitative analysis of electrically conductive diamond-like amorphous carbon filmsHaruhisa Kinoshita; Masahiro Yoshida20012001, vol.19, no.4, P. II
Energetic oxygen ions in the reactive sputtering of the Zr target in Ar + O{sub}2 atmosphereKikuo Tominaga; Takuya Kikuma20012001, vol.19, no.4, P. II
Low temperature aluminum nitride deposition on aluminum by rf reactive sputteringR. N. Tait; A. Mirfazli20012001, vol.19, no.4, P. II
Investigation of the W-TiN metal for metal-oxide-semiconductor devicesSunpil Youn; Kwanchong Roh; Sungwoo Yang; Yonghan Roh; Ki-Su Kim; Young-Chul Jang; Nae-Eung Lee20012001, vol.19, no.4, P. II
Effect of interlayer on thermal stability of nickel silicideJer-Shen Maa; Yoshi Ono; Douglas; J. Tweet; Fengyan Zhang; Sheng Teng Hsu20012001, vol.19, no.4, P. II
Optical and structural properties of sol-gel SiO{sub}2 layers containing cobaltA. Ramos-Mendoza; H. Tototzintle-Hulitle; A. Mendoza-Galvan; B. S. Chao20012001, vol.19, no.4, P. II
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